M58BW016DB

The M58BW016B/D is a 16Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Double-Word basis using a 2.7V to 3.6V VDD supply for the circuit and a VDDQ supply down to 2.4V for the Input and Output buffers. Optionally a 12V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.

The devices support Asynchronous (Latch Controlled and Page Read) and Synchronous Bus operations. The Synchronous Burst Read Interface allows a high data transfer rate controlled by the Burst Clock, K, signal. It is capable of bursting fixed or unlimited lengths of data. The burst type,latency and length are configurable and can be
easily adapted to a large variety of system clock frequencies and microprocessors. All Writes are Asynchronous. On power-up the memory defaults to Read mode with an Asynchronous Bus.The device has a boot block architecture with an array of 8 parameter block of 64Kb each and 31 main blocks of 512Kb each. The parameter blocks can be located at the top of the address space,M58BW016BT, M58BW016DT or at the bottom,M58BW016BB, M58BW016DB.

Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a Program or Erase operation can be detected and
any error conditions identified in the Status Register.The command set required to control the memory is consistent with JEDEC standards.Erase can be suspended in order to perform either Read or Program in any other block and then resumed.Program can be suspended to Read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles.

All blocks are protected during power-